{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825044","patent":{"patent_number":"US-9825044","title":"Method to prevent lateral epitaxial growth in semiconductor devices","assignee":null,"inventors":[],"filing_date":"2016-10-08T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"The method for preventing epitaxial growth in a semiconductor device begins with cutting a set of long fins into a set of fins of a FinFET structure, the set of fins having respective cut faces of a set of cut faces located at respective fin ends of a set of fin ends. A photoresist layer is patterned over the set of fin ends of the set of fins of the FinFET structure. The photoresist pattern over the set of fin ends differs from the photoresist pattern over other areas of the FinFET structure as the photoresist pattern over the set of fin ends protects the first dielectric material at the set of fin ends. A set of dielectric blocks is formed at the set of fin ends, wherein each of the dielectric blocks covers at least one cut face. The set of dielectric blocks prevents epitaxial growth at the set of fin ends in a subsequent epitaxial growth step."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method to prevent lateral epitaxial growth in semiconductor devices","description":"The method for preventing epitaxial growth in a semiconductor device begins with cutting a set of long fins into a set of fins of a FinFET structure, the set of fins having respective cut faces of a s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825044","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825044","citation_suggestion":"Patentable. \"Method to prevent lateral epitaxial growth in semiconductor devices\" (US-9825044). https://patentable.app/patents/US-9825044","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825044","json":"https://patentable.app/api/llm-context/US-9825044","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:37:08.476Z"}