{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825055","patent":{"patent_number":"US-9825055","title":"FinFETs suitable for use in a high density SRAM cell","assignee":null,"inventors":[],"filing_date":"2015-07-17T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":22,"abstract":"Single gate and dual gate FinFET devices suitable for use in an SRAM memory array have respective fins, source regions, and drain regions that are formed from portions of a single, contiguous layer on the semiconductor substrate, so that STI is unnecessary. Pairs of FinFETs can be configured as dependent-gate devices wherein adjacent channels are controlled by a common gate, or as independent-gate devices wherein one channel is controlled by two gates. Metal interconnects coupling a plurality of the FinFET devices are made of a same material as the gate electrodes. Such structural and material commonalities help to reduce costs of manufacturing high-density memory arrays."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFETs suitable for use in a high density SRAM cell","description":"Single gate and dual gate FinFET devices suitable for use in an SRAM memory array have respective fins, source regions, and drain regions that are formed from portions of a single, contiguous layer on","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825055","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825055","citation_suggestion":"Patentable. \"FinFETs suitable for use in a high density SRAM cell\" (US-9825055). https://patentable.app/patents/US-9825055","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825055","json":"https://patentable.app/api/llm-context/US-9825055","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:37:51.263Z"}