{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825116","patent":{"patent_number":"US-9825116","title":"Formation of high-resolution patterns inside deep cavities and applications to RF SI-embedded inductors","assignee":null,"inventors":[],"filing_date":"2015-12-04T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A method for fabricating high-resolution features in a deep recess includes etching a cavity in a substrate, fabricating at least one focusing pattern on a bottom of the cavity, wherein fabricating the focusing pattern comprises coating a first photoresist on the bottom of the cavity, patterning the first photoresist to define a focusing etch area using contact lithography, and etching the focusing etch area, coating a second photoresist on the bottom of the cavity, using the focusing pattern to focus a high resolution lithography tool at the bottom of the cavity to pattern the second photoresist to define a microfabrication feature area; and forming a microfabrication feature in the microfabrication feature area."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Formation of high-resolution patterns inside deep cavities and applications to RF SI-embedded inductors","description":"A method for fabricating high-resolution features in a deep recess includes etching a cavity in a substrate, fabricating at least one focusing pattern on a bottom of the cavity, wherein fabricating th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825116","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825116","citation_suggestion":"Patentable. \"Formation of high-resolution patterns inside deep cavities and applications to RF SI-embedded inductors\" (US-9825116). https://patentable.app/patents/US-9825116","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825116","json":"https://patentable.app/api/llm-context/US-9825116","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:28:08.638Z"}