{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825125","patent":{"patent_number":"US-9825125","title":"Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-10-19T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":4,"abstract":"In a silicon carbide semiconductor device, a trench penetrates a source region and a first gate region and reaches a drift layer. On an inner wall of the trench, a channel layer of a first conductivity-type is formed by epitaxial growth. On the channel layer, a second gate region of a second conductivity-type is formed. A first depressed portion is formed at an end portion of the trench to a position deeper than a thickness of the source region so as to remove the source region at the end portion of the trench. A corner portion of the first depressed portion is covered by a second conductivity-type layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device","description":"In a silicon carbide semiconductor device, a trench penetrates a source region and a first gate region and reaches a drift layer. On an inner wall of the trench, a channel layer of a first conductivit","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825125","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825125","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device\" (US-9825125). https://patentable.app/patents/US-9825125","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825125","json":"https://patentable.app/api/llm-context/US-9825125","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:30:59.288Z"}