{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825142","patent":{"patent_number":"US-9825142","title":"Methods of fabricating semiconductor devices","assignee":null,"inventors":[],"filing_date":"2015-12-21T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Methods of fabricating semiconductor devices include forming a first impurity region in a substrate by implanting a first impurity of a first conductivity type in a cell region and a peripheral region of the substrate to a first target depth from a top surface of the substrate; forming a second impurity region in the cell region and the peripheral region by implanting a second impurity of the first conductivity type into the cell region and the peripheral region to a second target depth that is smaller than the first depth from the top surface of the substrate; forming a cell transistor with a channel in the cell region, wherein the first impurity region forms the channel of the cell transistor; and forming a peripheral transistor with a channel in the peripheral region, wherein the second impurity region forms the channel of the peripheral transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of fabricating semiconductor devices","description":"Methods of fabricating semiconductor devices include forming a first impurity region in a substrate by implanting a first impurity of a first conductivity type in a cell region and a peripheral region","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825142","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825142","citation_suggestion":"Patentable. \"Methods of fabricating semiconductor devices\" (US-9825142). https://patentable.app/patents/US-9825142","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825142","json":"https://patentable.app/api/llm-context/US-9825142","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:49:19.584Z"}