{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825145","patent":{"patent_number":"US-9825145","title":"Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology","assignee":null,"inventors":[],"filing_date":"2016-03-10T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":15,"abstract":"When p-type impurities are implanted into a SiC substrate using a laser, controlling the concentration is difficult. A p-type impurity region is formed by a laser in a region where the control of the concentration in the SiC substrate is not necessary almost at all. A SiC semiconductor device having withstanding high voltage is manufactured at a lower temperature process compared to ion implantation process. A method of manufacturing a silicon carbide semiconductor device includes forming, on one main surface of a first conductivity-type silicon carbide substrate, a first conductivity-type drift layer having a lower concentration than that of the silicon carbide substrate; forming, on a front surface side of the drift layer, a second conductivity-type electric field control region by a laser doping technology; forming a Schottky electrode in contact with the drift layer; and forming, on the other main surface of the silicon carbide substrate, a cathode electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology","description":"When p-type impurities are implanted into a SiC substrate using a laser, controlling the concentration is difficult. A p-type impurity region is formed by a laser in a region where the control of the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825145","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825145","citation_suggestion":"Patentable. \"Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology\" (US-9825145). https://patentable.app/patents/US-9825145","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825145","json":"https://patentable.app/api/llm-context/US-9825145","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:35:33.831Z"}