{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825153","patent":{"patent_number":"US-9825153","title":"Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the method","assignee":null,"inventors":[],"filing_date":"2017-02-02T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"A method of manufacturing a semiconductor device includes forming a preliminary fin-type active pattern extending in a first direction, forming a device isolation pattern covering a lower portion of the preliminary fin-type active pattern, forming a gate structure extending in a second direction and crossing over the preliminary fin-type active pattern, forming a fin-type active pattern having a first region and a second region, forming a preliminary impurity-doped pattern on the second region by using a selective epitaxial-growth process, and forming an impurity-doped pattern by injecting impurities using a plasma doping process, wherein the upper surface of the first region is at a first level and the upper surface of the second region is at a second level lower than the first level."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the method","description":"A method of manufacturing a semiconductor device includes forming a preliminary fin-type active pattern extending in a first direction, forming a device isolation pattern covering a lower portion of t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825153","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825153","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the method\" (US-9825153). https://patentable.app/patents/US-9825153","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825153","json":"https://patentable.app/api/llm-context/US-9825153","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:20:20.834Z"}