{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825166","patent":{"patent_number":"US-9825166","title":"Silicon carbide semiconductor device and method for producing same","assignee":null,"inventors":[],"filing_date":"2013-01-23T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"Disclosed herein is a technique for realizing a high-performance and high-reliability silicon carbide semiconductor device. A trenched MISFET with a trench formed into the drift through a p-type body layer 105 includes an n-type resistance relaxation layer 109 covering the bottom portion of the trench, and a p-type field relaxation layer 108. The p-type field relaxation layer 108 is separated from the trench bottom portion via the resistance relaxation layer 109, and is wider than the resistance relaxation layer 109. This achieves a low ON resistance, high reliability, and high voltage resistance at the same time. By forming the field relaxation layer beneath the trench, feedback capacitance can be controlled to achieve a high switching rate and high reliability."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method for producing same","description":"Disclosed herein is a technique for realizing a high-performance and high-reliability silicon carbide semiconductor device. A trenched MISFET with a trench formed into the drift through a p-type body ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825166","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825166","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method for producing same\" (US-9825166). https://patentable.app/patents/US-9825166","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825166","json":"https://patentable.app/api/llm-context/US-9825166","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:28:36.476Z"}