{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825169","patent":{"patent_number":"US-9825169","title":"Partial, self-biased isolation in semiconductor devices","assignee":null,"inventors":[],"filing_date":"2015-12-16T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A device includes a semiconductor substrate, a buried doped isolation layer disposed in the semiconductor substrate to isolate the device, a drain region disposed in the semiconductor substrate and to which a voltage is applied during operation, and a depletion region disposed in the semiconductor substrate and having a conductivity type in common with the buried doped isolation barrier and the drain region. The depletion region reaches a depth in the semiconductor substrate to be in contact with the buried doped isolation layer. The depletion region establishes an electrical link between the buried doped isolation layer and the drain region such that the buried doped isolation layer is biased at a voltage level lower than the voltage applied to the drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Partial, self-biased isolation in semiconductor devices","description":"A device includes a semiconductor substrate, a buried doped isolation layer disposed in the semiconductor substrate to isolate the device, a drain region disposed in the semiconductor substrate and to","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825169","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825169","citation_suggestion":"Patentable. \"Partial, self-biased isolation in semiconductor devices\" (US-9825169). https://patentable.app/patents/US-9825169","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825169","json":"https://patentable.app/api/llm-context/US-9825169","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:48:15.266Z"}