{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825170","patent":{"patent_number":"US-9825170","title":"Semiconductor device comprising a transistor array and a termination region and method of manufacturing such a semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-02-10T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device formed in a semiconductor substrate having a first main surface comprises a transistor array and a termination region. The transistor array comprises a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region. The gate electrode is configured to control a conductivity of a channel formed in the body region. The gate electrode is disposed in first trenches. The body region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The body region has a shape of a first ridge extending along the first direction. The termination region comprises a termination trench, a portion of the termination trench extending in the first direction, a length of the termination trench being larger than a length of the first trenches, the length being measured along the first direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device comprising a transistor array and a termination region and method of manufacturing such a semiconductor device","description":"A semiconductor device formed in a semiconductor substrate having a first main surface comprises a transistor array and a termination region. The transistor array comprises a source region, a drain re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825170","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825170","citation_suggestion":"Patentable. \"Semiconductor device comprising a transistor array and a termination region and method of manufacturing such a semiconductor device\" (US-9825170). https://patentable.app/patents/US-9825170","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825170","json":"https://patentable.app/api/llm-context/US-9825170","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:22:45.168Z"}