{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825182","patent":{"patent_number":"US-9825182","title":"Method of intercalating insulating layer between metal and graphene layer and method of fabricating semiconductor device using the intercalation method","assignee":null,"inventors":[],"filing_date":"2016-02-23T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A method includes growing a graphene layer on a metal layer, intercalating a first material between the metal layer and the graphene layer by heating the first material at a first pressure and a first temperature, and intercalating a second material between the metal layer and the graphene layer by heating the second material at a second pressure different from the first pressure and a second temperature different from the first temperature. Accordingly, the first material and the second material are chemically bonded to each other to form an insulating layer, and the insulating layer may be between the metal layer and the graphene layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of intercalating insulating layer between metal and graphene layer and method of fabricating semiconductor device using the intercalation method","description":"A method includes growing a graphene layer on a metal layer, intercalating a first material between the metal layer and the graphene layer by heating the first material at a first pressure and a first","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825182","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825182","citation_suggestion":"Patentable. \"Method of intercalating insulating layer between metal and graphene layer and method of fabricating semiconductor device using the intercalation method\" (US-9825182). https://patentable.app/patents/US-9825182","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825182","json":"https://patentable.app/api/llm-context/US-9825182","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:46:52.274Z"}