{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825186","patent":{"patent_number":"US-9825186","title":"Read performance of a non-volatile memory device, in particular a non-volatile memory device with buried selection transistor","assignee":null,"inventors":[],"filing_date":"2016-11-30T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"The non-volatile memory device comprises memory cells each comprising a selectable state transistor having a floating gate and a control gate. The state transistor is of the depletion-mode type and is advantageously configured so as to have a threshold voltage that is preferably negative when the memory cell is in a virgin state. When the memory cell is read, a read voltage of zero may then be applied to the control gate and also to the control gates of the state transistors of all the memory cells of the memory device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Read performance of a non-volatile memory device, in particular a non-volatile memory device with buried selection transistor","description":"The non-volatile memory device comprises memory cells each comprising a selectable state transistor having a floating gate and a control gate. The state transistor is of the depletion-mode type and is","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825186","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825186","citation_suggestion":"Patentable. \"Read performance of a non-volatile memory device, in particular a non-volatile memory device with buried selection transistor\" (US-9825186). https://patentable.app/patents/US-9825186","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825186","json":"https://patentable.app/api/llm-context/US-9825186","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:23:53.864Z"}