{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9830959","patent":{"patent_number":"US-9830959","title":"Precharge circuitry for semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2016-11-07T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":12,"abstract":"A semiconductor memory apparatus may include a memory cell circuit, a data latch circuit, and a first stage amplification circuit. The data latch circuit may be electrically coupled to the memory cell circuit by a bit line. The data latch circuit may latch data transferred through the bit line. The data latch circuit may output latched data to an input/output line in response to a cell select signal. The data first stage amplification circuit may generate driving data to a voltage level of an external power supply voltage in response to a voltage level of the input/output line. The data first stage amplification circuit may precharge the input/output line to a voltage level lower than the external power supply voltage and higher than a ground voltage in response to a precharge signal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Precharge circuitry for semiconductor memory device","description":"A semiconductor memory apparatus may include a memory cell circuit, a data latch circuit, and a first stage amplification circuit. The data latch circuit may be electrically coupled to the memory cell","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9830959","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9830959","citation_suggestion":"Patentable. \"Precharge circuitry for semiconductor memory device\" (US-9830959). https://patentable.app/patents/US-9830959","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9830959","json":"https://patentable.app/api/llm-context/US-9830959","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:31:16.362Z"}