{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9830963","patent":{"patent_number":"US-9830963","title":"Word line-dependent and temperature-dependent erase depth","assignee":null,"inventors":[],"filing_date":"2016-05-24T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"Techniques are provided for reducing program disturb and short term data retention loss. Program disturb becomes worse for the drain-side memory cells at higher temperatures, while data retention generally does not become worse at higher temperatures. In one aspect, a deeper erase is provided for drain-side memory cells when the temperature is relatively high, to reduce program disturb. In another aspect, the verify levels of the programmed data states are lowered to reduce data retention loss when the temperature is relatively high. In another aspect, the number of read errors is used to adjust the depth of the depth of the erase operation. In another aspect, a pass voltage of a drain-side cell is lowered during a verify test for another cell to account for the deep erase of the drain-side cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Word line-dependent and temperature-dependent erase depth","description":"Techniques are provided for reducing program disturb and short term data retention loss. Program disturb becomes worse for the drain-side memory cells at higher temperatures, while data retention gene","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9830963","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9830963","citation_suggestion":"Patentable. \"Word line-dependent and temperature-dependent erase depth\" (US-9830963). https://patentable.app/patents/US-9830963","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9830963","json":"https://patentable.app/api/llm-context/US-9830963","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:28:40.998Z"}