{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9830976","patent":{"patent_number":"US-9830976","title":"Systems and methods for a high performance memory cell structure","assignee":null,"inventors":[],"filing_date":"2016-05-02T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"Systems and methods described herein provide a memory cell circuit. The memory cell circuit includes a first internal node communicatively coupled to a first write bit line via a first write pass gate, and a second internal node communicatively coupled to a second write bit line via a second write pass gate. The memory cell circuit further includes a first read bit line connected to a first read pass gate and a first transistor, and a second read bit line connected to a second read pass gate and a second transistor. The first internal node is decoupled from the first read bit line by the first transistor, and the second internal node is decoupled from the second read bit line by the second transistor when a write operation and a read operation occur at the same time."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Systems and methods for a high performance memory cell structure","description":"Systems and methods described herein provide a memory cell circuit. The memory cell circuit includes a first internal node communicatively coupled to a first write bit line via a first write pass gate","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9830976","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9830976","citation_suggestion":"Patentable. \"Systems and methods for a high performance memory cell structure\" (US-9830976). https://patentable.app/patents/US-9830976","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9830976","json":"https://patentable.app/api/llm-context/US-9830976","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:12:54.399Z"}