{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9830994","patent":{"patent_number":"US-9830994","title":"Sequential deselection of word lines for suppressing first read issue","assignee":null,"inventors":[],"filing_date":"2017-02-02T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"Systems and methods for reducing trapped electrons within a NAND string are described. During a sensing operation, one or more control circuits may discharge or initiate discharge of control gates corresponding with contiguous memory cell transistors of a NAND string from a read pass voltage (e.g., 10V) to a second voltage less than the pass voltage (e.g., 2V) in an order starting from a first set of the contiguous memory cell transistors closest to the first end of the NAND string and ending with a second set of the contiguous memory cell transistors closest to the second end of the NAND string. Subsequently, the one or more control circuits may either concurrently or simultaneously discharge the control gates corresponding with the contiguous memory cell transistors from the second voltage to a third voltage less than the intermediate voltage (e.g., from 2V to 0V)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Sequential deselection of word lines for suppressing first read issue","description":"Systems and methods for reducing trapped electrons within a NAND string are described. During a sensing operation, one or more control circuits may discharge or initiate discharge of control gates cor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9830994","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9830994","citation_suggestion":"Patentable. \"Sequential deselection of word lines for suppressing first read issue\" (US-9830994). https://patentable.app/patents/US-9830994","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9830994","json":"https://patentable.app/api/llm-context/US-9830994","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:18:15.324Z"}