{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831080","patent":{"patent_number":"US-9831080","title":"Method for manufacturing semiconductor device including a heat treatment step","assignee":null,"inventors":[],"filing_date":"2015-03-25T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A method for manufacturing a semiconductor device includes a step of preparing a SiC substrate, a step of fixing the SiC substrate on an electrostatic chuck and heat-treating the SiC substrate, and a step of performing ion implantation treatment on the SiC substrate fixed on the electrostatic chuck and heat-treated. The step of heat-treating includes an outer circumferential-side chucking step which generates an electrostatic attraction force between an outer circumferential region of the SiC substrate and an outer circumferential portion of the electrostatic chuck, the outer circumferential portion facing the outer circumferential region, and an inner circumferential-side chucking step which is started after the outer circumferential-side chucking step is started, and generates an electrostatic attraction force between an inner circumferential region of the SiC substrate and an inner circumferential portion of the electrostatic chuck, the inner circumferential portion facing the inner circumferential region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device including a heat treatment step","description":"A method for manufacturing a semiconductor device includes a step of preparing a SiC substrate, a step of fixing the SiC substrate on an electrostatic chuck and heat-treating the SiC substrate, and a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831080","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831080","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device including a heat treatment step\" (US-9831080). https://patentable.app/patents/US-9831080","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831080","json":"https://patentable.app/api/llm-context/US-9831080","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:31:15.546Z"}