{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831082","patent":{"patent_number":"US-9831082","title":"Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium","assignee":null,"inventors":[],"filing_date":"2016-02-02T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A method of manufacturing a semiconductor device includes forming a thin film having excellent etching resistance and a low dielectric constant on a substrate, removing first impurities containing H2O and Cl from the thin film by heating the thin film at a first temperature higher than a temperature of the substrate in the forming of the thin film, and removing second impurities containing a hydrocarbon compound (CxHy-based impurities) from the thin film in which heat treatment is performed at the first temperature by heating the thin film at a second temperature equal to or higher than the first temperature."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium","description":"A method of manufacturing a semiconductor device includes forming a thin film having excellent etching resistance and a low dielectric constant on a substrate, removing first impurities containing H2O","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831082","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831082","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium\" (US-9831082). https://patentable.app/patents/US-9831082","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831082","json":"https://patentable.app/api/llm-context/US-9831082","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:16:45.941Z"}