{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831085","patent":{"patent_number":"US-9831085","title":"Method of fabricating hafnium oxide layer and semiconductor device having the same","assignee":null,"inventors":[],"filing_date":"2016-07-01T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":24,"abstract":"Provided are a method of fabricating a hafnium oxide layer and a method of fabricating a semiconductor device using the same. The method of fabricating a tetragonal hafnium oxide layer includes providing a substrate and then forming an initial hafnium oxide layer on the substrate. The initial hafnium oxide layer may have an amorphous structure, a monoclinic crystal structure, or a mixed structure thereof on the substrate. Phase-changing the initial hafnium oxide layer to a tetragonal hafnium oxide layer by heating the initial hafnium oxide layer at a temperature equal to or higher than a phase change temperature to the tetragonal hafnium oxide layer, is performed. Then, the heated tetragonal hafnium oxide layer may be rapidly cooled to suppress nucleation and growth of a monoclinic hafnium oxide in the tetragonal hafnium oxide layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating hafnium oxide layer and semiconductor device having the same","description":"Provided are a method of fabricating a hafnium oxide layer and a method of fabricating a semiconductor device using the same. The method of fabricating a tetragonal hafnium oxide layer includes provid","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831085","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831085","citation_suggestion":"Patentable. \"Method of fabricating hafnium oxide layer and semiconductor device having the same\" (US-9831085). https://patentable.app/patents/US-9831085","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831085","json":"https://patentable.app/api/llm-context/US-9831085","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:21:40.859Z"}