{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831113","patent":{"patent_number":"US-9831113","title":"Semiconductor device having element separation region formed from a recess-free trench","assignee":null,"inventors":[],"filing_date":"2014-02-19T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":4,"abstract":"A method of manufacturing a semiconductor device includes forming a silicon nitride film having an opening portion on a semiconductor substrate, forming a silicon oxide film on the silicon nitride film and on a side face of the opening portion, performing an etching treatment to the silicon oxide film so that a sidewall is formed on the side face of the opening portion, forming a trench on the semiconductor substrate with use of the sidewall and the silicon nitride film as a mask, and forming an insulating layer in the trench. The step of forming the silicon oxide film includes oxidizing the silicon nitride film with a plasma oxidation method or a radical oxidation method."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having element separation region formed from a recess-free trench","description":"A method of manufacturing a semiconductor device includes forming a silicon nitride film having an opening portion on a semiconductor substrate, forming a silicon oxide film on the silicon nitride fil","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831113","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831113","citation_suggestion":"Patentable. \"Semiconductor device having element separation region formed from a recess-free trench\" (US-9831113). https://patentable.app/patents/US-9831113","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831113","json":"https://patentable.app/api/llm-context/US-9831113","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:32:45.796Z"}