{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831118","patent":{"patent_number":"US-9831118","title":"Reducing neighboring word line in interference using low-k oxide","assignee":null,"inventors":[],"filing_date":"2016-05-24T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Techniques for fabricating a memory device which has reduced neighboring word line interference, and a corresponding memory device. The memory device comprises a stack of alternating conductive and dielectric layers, where the conductive layers form word lines or control gates of memory cells. In one aspect, the memory device is provided with a reduced dielectric constant (k) in locations of a fringing electric field of the control gate. For example, portions of the dielectric layers can be replaced with a low-k material. One approach involves recessing the dielectric layer and providing a low-k material in the recess. Another approach involves doping a portion of the blocking oxide layer to reduce its dielectric constant. Another approach involves removing a portion of the blocking oxide layer. In another aspect, the memory device is provided with an increased dielectric constant adjacent to the control gates."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Reducing neighboring word line in interference using low-k oxide","description":"Techniques for fabricating a memory device which has reduced neighboring word line interference, and a corresponding memory device. The memory device comprises a stack of alternating conductive and di","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831118","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831118","citation_suggestion":"Patentable. \"Reducing neighboring word line in interference using low-k oxide\" (US-9831118). https://patentable.app/patents/US-9831118","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831118","json":"https://patentable.app/api/llm-context/US-9831118","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:36:52.124Z"}