{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831120","patent":{"patent_number":"US-9831120","title":"Semiconductor arrangement and method of making the same","assignee":null,"inventors":[],"filing_date":"2016-06-30T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"One or more semiconductor arrangements are provided. A semiconductor arrangement includes a first dielectric layer defining a first recess, a first contact in the first dielectric layer, a first metal cap over at least part of the first contact and a second dielectric layer over the first dielectric layer within the first recess and defining an air gap proximate the first contact. One or more methods of forming a semiconductor arrangement are also provided. Such a method includes forming a first metal cap on a first exposed surface of a first contact, the first metal cap having an extension region that extends into a first recess defined in a first dielectric layer and forming a second dielectric layer over the first dielectric layer within the first recess such that an air gap is defined within the second dielectric layer proximate the first contact due to the extension region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor arrangement and method of making the same","description":"One or more semiconductor arrangements are provided. A semiconductor arrangement includes a first dielectric layer defining a first recess, a first contact in the first dielectric layer, a first metal","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831120","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831120","citation_suggestion":"Patentable. \"Semiconductor arrangement and method of making the same\" (US-9831120). https://patentable.app/patents/US-9831120","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831120","json":"https://patentable.app/api/llm-context/US-9831120","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:35:22.039Z"}