{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831123","patent":{"patent_number":"US-9831123","title":"Methods of forming MIS contact structures on transistor devices","assignee":null,"inventors":[],"filing_date":"2016-04-05T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":26,"abstract":"One method disclosed herein includes performing a plurality of conformal deposition processes to form first, second and third layers of material within a contact opening, wherein the first layer comprises a contact insulating material, the second layer comprises a metal-containing material and the third layer comprises a conductive cap material, wherein the third layer is positioned above the second layer. The method further includes forming a contact ion implant region that is positioned at least partially in at least one of the first, second or third layers of material, forming a conductive material above the third layer and removing portions of the layers of material positioned outside of the contact opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming MIS contact structures on transistor devices","description":"One method disclosed herein includes performing a plurality of conformal deposition processes to form first, second and third layers of material within a contact opening, wherein the first layer compr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831123","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831123","citation_suggestion":"Patentable. \"Methods of forming MIS contact structures on transistor devices\" (US-9831123). https://patentable.app/patents/US-9831123","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831123","json":"https://patentable.app/api/llm-context/US-9831123","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:04:38.643Z"}