{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831133","patent":{"patent_number":"US-9831133","title":"Semiconductor devices having metal gate and method for manufacturing semiconductor devices having metal gate","assignee":null,"inventors":[],"filing_date":"2016-11-16T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A method for manufacturing semiconductor devices having metal gate includes follow steps. A substrate including a plurality of isolation structures is provided. A first nFET device and a second nFET device are formed on the substrate. The first nFET device includes a first gate trench and the second nFET includes a second gate trench. A third bottom barrier layer is formed in the first gate trench and a third p-work function metal layer is formed in the second gate trench, simultaneously. The third bottom barrier layer and the third p-work function metal layer include a same material. An n-work function metal layer is formed in the first gate trench and the second gate trench. The n-work function metal layer in the first gate trench directly contacts the third bottom barrier layer, and the n-work function metal layer in the second gate trench directly contacts the third p-work function metal layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices having metal gate and method for manufacturing semiconductor devices having metal gate","description":"A method for manufacturing semiconductor devices having metal gate includes follow steps. A substrate including a plurality of isolation structures is provided. A first nFET device and a second nFET d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831133","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831133","citation_suggestion":"Patentable. \"Semiconductor devices having metal gate and method for manufacturing semiconductor devices having metal gate\" (US-9831133). https://patentable.app/patents/US-9831133","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831133","json":"https://patentable.app/api/llm-context/US-9831133","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:23:29.468Z"}