{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831156","patent":{"patent_number":"US-9831156","title":"Front-to-back bonding with through-substrate via (TSV)","assignee":null,"inventors":[],"filing_date":"2016-03-21T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods for forming a semiconductor device structure are provided. The method includes providing a first semiconductor wafer and a second semiconductor wafer. A first transistor is formed in a front-side of the first semiconductor wafer, and no devices are formed in the second semiconductor wafer. The method further includes bonding the front-side of the first semiconductor wafer to a backside of the second semiconductor wafer and thinning a front-side of the second semiconductor wafer. After thinning the second semiconductor wafer, a second transistor is formed in the front-side of the second semiconductor wafer. At least one first through substrate via (TSV) is formed in the second semiconductor wafer, and the first TSV directly contacts a conductive feature of the first semiconductor wafer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Front-to-back bonding with through-substrate via (TSV)","description":"Methods for forming a semiconductor device structure are provided. The method includes providing a first semiconductor wafer and a second semiconductor wafer. A first transistor is formed in a front-s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831156","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831156","citation_suggestion":"Patentable. \"Front-to-back bonding with through-substrate via (TSV)\" (US-9831156). https://patentable.app/patents/US-9831156","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831156","json":"https://patentable.app/api/llm-context/US-9831156","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:42:12.571Z"}