{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831241","patent":{"patent_number":"US-9831241","title":"Method and structure for improving finFET with epitaxy source/drain","assignee":null,"inventors":[],"filing_date":"2016-03-18T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"Isolation structures are formed to laterally surround a gate material block such that each sidewall of the gate material block abuts a corresponding sidewall of the isolation structures. Sidewalls of the gate material bock define ends of gate structures to be subsequently formed. The isolation structures obstruct lateral growth of a semiconductor material during a selective epitaxial grown process in formation of source/drain regions, thereby preventing merging of the source/drain regions at the ends of gate structures. As a result, a lateral distance between each sidewall of the gate material block and a corresponding outermost sidewall of an array of a plurality of semiconductor fins can be made sufficiently small without causing the electrical shorts of the source/drain regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and structure for improving finFET with epitaxy source/drain","description":"Isolation structures are formed to laterally surround a gate material block such that each sidewall of the gate material block abuts a corresponding sidewall of the isolation structures. Sidewalls of ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831241","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831241","citation_suggestion":"Patentable. \"Method and structure for improving finFET with epitaxy source/drain\" (US-9831241). https://patentable.app/patents/US-9831241","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831241","json":"https://patentable.app/api/llm-context/US-9831241","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:35:15.997Z"}