{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831242","patent":{"patent_number":"US-9831242","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-04-01T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":16,"abstract":"In a method for manufacturing a semiconductor device, a doped layer is formed in a substrate. A barrier layer that is in contact with the doped layer is formed. A semiconductor layer is formed over the substrate and the barrier layer. A fin structure is formed by patterning the semiconductor layer, the barrier layer, and the doped layer such that the fin structure includes a channel region including the semiconductor layer and a well region including the doped layer. An isolation insulating layer is formed such that a first portion of the fin structure protrudes from the isolation insulating layer and a second portion of the fin structure is embedded in the isolation insulating layer. A gate structure is formed over the fin structure and the isolation insulating layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"In a method for manufacturing a semiconductor device, a doped layer is formed in a substrate. A barrier layer that is in contact with the doped layer is formed. A semiconductor layer is formed over th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831242","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831242","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-9831242). https://patentable.app/patents/US-9831242","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831242","json":"https://patentable.app/api/llm-context/US-9831242","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:38:59.111Z"}