{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831244","patent":{"patent_number":"US-9831244","title":"Method for manufacturing a semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-08-28T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor device includes forming an insulation film including a trench on a substrate, forming a first metal gate film pattern and a second metal gate film pattern in the trench, redepositing a second metal gate film on the first and second metal gate film patterns and the insulation film, and forming a redeposited second metal gate film pattern on the first and second metal gate film patterns by performing a planarization process for removing a portion of the redeposited second metal gate film so as to expose a top surface of the insulation film, and forming a blocking layer pattern on the redeposited second metal gate film pattern by oxidizing an exposed surface of the redeposited second metal gate film pattern."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a semiconductor device","description":"A method for manufacturing a semiconductor device includes forming an insulation film including a trench on a substrate, forming a first metal gate film pattern and a second metal gate film pattern in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831244","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831244","citation_suggestion":"Patentable. \"Method for manufacturing a semiconductor device\" (US-9831244). https://patentable.app/patents/US-9831244","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831244","json":"https://patentable.app/api/llm-context/US-9831244","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:42:47.041Z"}