{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831251","patent":{"patent_number":"US-9831251","title":"Method of fabricating semiconductor device and semiconductor device fabricated thereby","assignee":null,"inventors":[],"filing_date":"2016-08-12T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A method of fabricating a semiconductor device is disclosed. The method includes the steps of forming recesses in a semiconductor substrate; epitaxial growing a first SiGe seed layer with constant Ge content in the recesses; epitaxial growing a second SiGe layer with a constant Ge content higher than the Ge content of first SiGe seed layer on the first SiGe seed layer; epitaxial growing a third SiGe layer with a constant Ge content lower than the Ge content of the second SiGe layer; and forming a cap layer on the third SiGe layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating semiconductor device and semiconductor device fabricated thereby","description":"A method of fabricating a semiconductor device is disclosed. The method includes the steps of forming recesses in a semiconductor substrate; epitaxial growing a first SiGe seed layer with constant Ge ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831251","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831251","citation_suggestion":"Patentable. \"Method of fabricating semiconductor device and semiconductor device fabricated thereby\" (US-9831251). https://patentable.app/patents/US-9831251","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831251","json":"https://patentable.app/api/llm-context/US-9831251","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:35:20.803Z"}