{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831253","patent":{"patent_number":"US-9831253","title":"FinFET memory device","assignee":null,"inventors":[],"filing_date":"2016-11-21T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"A FinFET system comprises a first inverter comprising a first p-type pull-up transistor (PU) and a first n-type pull-down transistor (PD connected in series with the first PD, a second inverter cross-coupled to the first inverter comprising a second PU and a second PD connected in series with the second PD, a first pass-gate transistor, wherein the first pass-gate transistor is coupled between the first inverter and a first bit line, a second pass-gate transistor, wherein the second pass-gate transistor is coupled between the second inverter and a second bit line, a first dummy transistor coupled to a first common node of the first PU and the first PD and a second dummy transistor coupled to a second common node of the second PU and the second PD."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET memory device","description":"A FinFET system comprises a first inverter comprising a first p-type pull-up transistor (PU) and a first n-type pull-down transistor (PD connected in series with the first PD, a second inverter cross-","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831253","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831253","citation_suggestion":"Patentable. \"FinFET memory device\" (US-9831253). https://patentable.app/patents/US-9831253","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831253","json":"https://patentable.app/api/llm-context/US-9831253","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:34:05.927Z"}