{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831257","patent":{"patent_number":"US-9831257","title":"SGVC 3D architecture with floating gate device in lateral recesses on sides of conductive strips and insulating strips","assignee":null,"inventors":[],"filing_date":"2016-02-05T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":10,"abstract":"A memory device is provided that includes a plurality of memory cells. The memory device includes a plurality of stacks of conductive strips separated by insulating strips. Data storage structures including floating gates are disposed along the conductive strips in the stacks. Vertical channel films are disposed on sidewalls of the stacks. Memory cells in the plurality of memory cells have channels in the vertical channel films, and control gates in the conductive strips. A tunnel oxide layer is disposed between the vertical channel films and the floating gates. The floating gates can be coplanar with conductive strips in the plurality of stacks, or be disposed between the conductive strips in the plurality of stacks."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SGVC 3D architecture with floating gate device in lateral recesses on sides of conductive strips and insulating strips","description":"A memory device is provided that includes a plurality of memory cells. The memory device includes a plurality of stacks of conductive strips separated by insulating strips. Data storage structures inc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831257","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831257","citation_suggestion":"Patentable. \"SGVC 3D architecture with floating gate device in lateral recesses on sides of conductive strips and insulating strips\" (US-9831257). https://patentable.app/patents/US-9831257","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831257","json":"https://patentable.app/api/llm-context/US-9831257","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:21:30.581Z"}