{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831259","patent":{"patent_number":"US-9831259","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-09-27T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":16,"abstract":"Provided is a semiconductor device having improved performance. Over a semiconductor substrate, a dummy control gate electrode is formed via a first insulating film. Over the semiconductor substrate, a memory gate electrode for a memory cell is formed via a second insulating film having an internal charge storage portion so as to be adjacent to the dummy control gate electrode. At this time, the height of the memory gate electrode is adjusted to be lower than the height of the dummy control gate electrode. Then, a third insulating film is formed so as to cover the dummy control gate electrode and the memory gate electrode. Then, the third insulating film is polished to expose the dummy control gate electrode. At this time, the memory gate electrode is not exposed. Then, the dummy control gate electrode is removed and replaced with a metal gate electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"Provided is a semiconductor device having improved performance. Over a semiconductor substrate, a dummy control gate electrode is formed via a first insulating film. Over the semiconductor substrate, ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831259","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831259","citation_suggestion":"Patentable. \"Semiconductor device\" (US-9831259). https://patentable.app/patents/US-9831259","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831259","json":"https://patentable.app/api/llm-context/US-9831259","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:55:38.238Z"}