{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831305","patent":{"patent_number":"US-9831305","title":"Semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-05-06T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":10,"abstract":"A semiconductor device is provided. The semiconductor device includes a substrate; an epitaxial layer; a first conductive type first well region disposed in the substrate and the epitaxial layer; a second conductive type first buried layer and a second conductive type second buried layer disposed at opposite sides of the first conductive type first well region, respectively; a first conductive type second well region disposed in the epitaxial layer and being in direct contact with the first conductive type first well region; a second conductive type third buried layer disposed in the first conductive type first well region and/or the first conductive type second well region; a second conductive type doped region disposed in the first conductive type second well region; a gate structure; a drain contact plug; and a source contact plug."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing the same","description":"A semiconductor device is provided. The semiconductor device includes a substrate; an epitaxial layer; a first conductive type first well region disposed in the substrate and the epitaxial layer; a se","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831305","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831305","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing the same\" (US-9831305). https://patentable.app/patents/US-9831305","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831305","json":"https://patentable.app/api/llm-context/US-9831305","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:40:46.141Z"}