{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831307","patent":{"patent_number":"US-9831307","title":"Gap fill self planarization on post EPI","assignee":null,"inventors":[],"filing_date":"2016-12-06T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure relates to an integrated chip having gate electrodes separated from an epitaxial source/drain region by gaps filled with a flowable dielectric material. In some embodiments, the integrated chip has an epitaxial source/drain region protruding outward from a substrate. A first gate structure, having a conductive gate electrode, is separated from the epitaxial source/drain region by a gap. A flowable dielectric material is disposed within the gap, and a pre-metal dielectric (PMD) layer is arranged above the flowable dielectric material. The PMD layer continuously extends between a sidewall of the first gate structure and a sidewall of a second gate structure, and has an upper surface that is substantially aligned with an upper surface of the conductive gate electrode. A metal contact is electrically coupled to the conductive gate electrode and is disposed within an inter-level dielectric layer over the PMD layer and the first gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gap fill self planarization on post EPI","description":"The present disclosure relates to an integrated chip having gate electrodes separated from an epitaxial source/drain region by gaps filled with a flowable dielectric material. In some embodiments, the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831307","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831307","citation_suggestion":"Patentable. \"Gap fill self planarization on post EPI\" (US-9831307). https://patentable.app/patents/US-9831307","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831307","json":"https://patentable.app/api/llm-context/US-9831307","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:41:26.996Z"}