{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831313","patent":{"patent_number":"US-9831313","title":"Method to thin down indium phosphide layer","assignee":null,"inventors":[],"filing_date":"2016-08-12T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":16,"abstract":"The disclosed subject matter provides a Fin-FET with a thinned-down InP layer and thinning-down method thereof. In a Fin-FET, the fin structure is made of InGaAs and an InP layer is formed to cover the fin structure. The InP layer is obtained from an initial InP layer formed on the fin structure through a thinning down process including converting a surface portion of the InP layer into a Phosphorus-rich layer and removing the Phosphorus-rich layer. The thickness of the ultimately-formed InP layer is less than or equal to 1 nm. According to the disclosed method, the InP layer in the Fin-FET may be easily thinned down, and during the thinning-down process, contamination may be avoided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method to thin down indium phosphide layer","description":"The disclosed subject matter provides a Fin-FET with a thinned-down InP layer and thinning-down method thereof. In a Fin-FET, the fin structure is made of InGaAs and an InP layer is formed to cover th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831313","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831313","citation_suggestion":"Patentable. \"Method to thin down indium phosphide layer\" (US-9831313). https://patentable.app/patents/US-9831313","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831313","json":"https://patentable.app/api/llm-context/US-9831313","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:32:01.046Z"}