{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831317","patent":{"patent_number":"US-9831317","title":"Buried contact structures for a vertical field-effect transistor","assignee":null,"inventors":[],"filing_date":"2017-03-02T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"Structures including a vertical field-effect transistor and fabrication methods for a structure including a vertical field-effect transistor. A vertical field-effect transistor includes a source/drain region located in a section of a semiconductor layer, a first semiconductor fin projecting from the source/drain region, a second semiconductor fin projecting from the source/drain region, and a gate electrode on the section of the semiconductor layer and coupled with the first semiconductor fin and with the second semiconductor fin. The structure further includes a contact located in a trench defined in the section of the semiconductor layer between the first semiconductor fin and the second semiconductor fin. The contact is coupled with the source/drain region of the vertical field-effect transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Buried contact structures for a vertical field-effect transistor","description":"Structures including a vertical field-effect transistor and fabrication methods for a structure including a vertical field-effect transistor. A vertical field-effect transistor includes a source/drain","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831317","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831317","citation_suggestion":"Patentable. \"Buried contact structures for a vertical field-effect transistor\" (US-9831317). https://patentable.app/patents/US-9831317","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831317","json":"https://patentable.app/api/llm-context/US-9831317","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:39:29.423Z"}