{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831323","patent":{"patent_number":"US-9831323","title":"Structure and method to achieve compressively strained Si NS","assignee":null,"inventors":[],"filing_date":"2016-09-15T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A stack for a semiconductor device and a method for making the stack are disclosed. The stack includes a plurality of sacrificial layers in which each sacrificial layer has a first lattice parameter; and at least one channel layer that has a second lattice parameter in which the first lattice parameter is less than or equal to the second lattice parameter, and each channel layer is disposed between and in contact with two sacrificial layers and includes a compressive strain or a neutral strain based on a difference between the first lattice parameter and the second lattice parameter."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and method to achieve compressively strained Si NS","description":"A stack for a semiconductor device and a method for making the stack are disclosed. The stack includes a plurality of sacrificial layers in which each sacrificial layer has a first lattice parameter; ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831323","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831323","citation_suggestion":"Patentable. \"Structure and method to achieve compressively strained Si NS\" (US-9831323). https://patentable.app/patents/US-9831323","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831323","json":"https://patentable.app/api/llm-context/US-9831323","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:14:43.229Z"}