{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831324","patent":{"patent_number":"US-9831324","title":"Self-aligned inner-spacer replacement process using implantation","assignee":null,"inventors":[],"filing_date":"2016-08-12T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":11,"abstract":"A method for manufacturing a semiconductor device includes forming a stacked configuration of first and second semiconductor layers on a semiconductor substrate, wherein the stacked configuration comprises a repeating arrangement of a second semiconductor layer stacked on a first semiconductor layer, forming a plurality of dummy gates spaced apart from each other on the stacked configuration, wherein the plurality of dummy gates cover a portion of the stacked configuration in a channel region, performing an implantation of a semiconductor material on exposed portions of the stacked configuration in a source/drain region, wherein the implantation increases a concentration of the semiconductor material in the exposed portions of the stacked configuration, and selectively removing first semiconductor layers having an increased concentration of the semiconductor material from the source/drain region, wherein the removed first semiconductor layers correspond in position to the first semiconductor layers in the channel region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned inner-spacer replacement process using implantation","description":"A method for manufacturing a semiconductor device includes forming a stacked configuration of first and second semiconductor layers on a semiconductor substrate, wherein the stacked configuration comp","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831324","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831324","citation_suggestion":"Patentable. \"Self-aligned inner-spacer replacement process using implantation\" (US-9831324). https://patentable.app/patents/US-9831324","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831324","json":"https://patentable.app/api/llm-context/US-9831324","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:13:06.557Z"}