{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831332","patent":{"patent_number":"US-9831332","title":"High electron mobility transistor (HEMT) and a method of forming the same","assignee":null,"inventors":[],"filing_date":"2016-06-21T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":17,"abstract":"A high electron mobility transistor (HEMT) made of nitride semiconductor materials, and a method to form the HEMT are disclosed. The HEMT includes a channel layer made of GaN, a barrier layer made of one of AlGaN, InAlN, and InAlGaN on the GaN channel layer, a cap layer made of n-type GaN on the barrier layer, and an insulating layer on the cap layer. The insulating layer has an opening into which the gate is formed. The cap layer has a region in the opening that has a thickness smaller than a thickness of portions of the cap layer that are outside of such region. The outside portions have a thickness that is preferably 5 nm at most."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High electron mobility transistor (HEMT) and a method of forming the same","description":"A high electron mobility transistor (HEMT) made of nitride semiconductor materials, and a method to form the HEMT are disclosed. The HEMT includes a channel layer made of GaN, a barrier layer made of ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831332","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831332","citation_suggestion":"Patentable. \"High electron mobility transistor (HEMT) and a method of forming the same\" (US-9831332). https://patentable.app/patents/US-9831332","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831332","json":"https://patentable.app/api/llm-context/US-9831332","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:51:24.038Z"}