{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831343","patent":{"patent_number":"US-9831343","title":"Semiconductor device having NFET structure and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2015-12-30T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device having n-type field-effect-transistor (NFET) structure and a method of fabricating the same are provided. The NFET structure of the semiconductor device includes a silicon substrate, at least one source/drain portion and a cap layer. The source/drain portion can be disposed within the silicon substrate, and the source/drain portion comprises at least one n-type dopant-containing portion. The cap layer overlies and covers the source/drain portion, and the cap layer includes silicon carbide (SiC) or silicon germanium (SiGe) with relatively low germanium concentration, thereby preventing n-type dopants in the at least one n-type dopant-containing portion of the source/drain portion from being degraded after sequent thermal and cleaning processes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having NFET structure and method of fabricating the same","description":"A semiconductor device having n-type field-effect-transistor (NFET) structure and a method of fabricating the same are provided. The NFET structure of the semiconductor device includes a silicon subst","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831343","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831343","citation_suggestion":"Patentable. \"Semiconductor device having NFET structure and method of fabricating the same\" (US-9831343). https://patentable.app/patents/US-9831343","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831343","json":"https://patentable.app/api/llm-context/US-9831343","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:56:08.590Z"}