{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9831346","patent":{"patent_number":"US-9831346","title":"FinFETs with air-gap spacers and methods for forming the same","assignee":null,"inventors":[],"filing_date":"2016-07-27T00:00:00.000Z","publication_date":"2017-11-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"Fin field effect transistors (FinFETs) include air-gaps between adjacent metal contacts and/or between metal contacts and the transistor gate. The air-gaps are formed during non-conformal deposition of an isolation dielectric in conjunction with a metal-first process to form the conductive structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFETs with air-gap spacers and methods for forming the same","description":"Fin field effect transistors (FinFETs) include air-gaps between adjacent metal contacts and/or between metal contacts and the transistor gate. The air-gaps are formed during non-conformal deposition o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9831346","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9831346","citation_suggestion":"Patentable. \"FinFETs with air-gap spacers and methods for forming the same\" (US-9831346). https://patentable.app/patents/US-9831346","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9831346","json":"https://patentable.app/api/llm-context/US-9831346","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:31:20.008Z"}