{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9835570","patent":{"patent_number":"US-9835570","title":"X-ray diffraction (XRD) characterization methods for sigma=3 twin defects in cubic semiconductor (100) wafers","assignee":null,"inventors":[],"filing_date":"2014-09-12T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["G01N","G01N","G01N","G01N","G01N","G01N"],"num_claims":18,"abstract":"An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"X-ray diffraction (XRD) characterization methods for sigma=3 twin defects in cubic semiconductor (100) wafers","description":"An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9835570","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9835570","citation_suggestion":"Patentable. \"X-ray diffraction (XRD) characterization methods for sigma=3 twin defects in cubic semiconductor (100) wafers\" (US-9835570). https://patentable.app/patents/US-9835570","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9835570","json":"https://patentable.app/api/llm-context/US-9835570","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:58:00.071Z"}