{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837153","patent":{"patent_number":"US-9837153","title":"Selecting reversible resistance memory cells based on initial resistance switching","assignee":null,"inventors":[],"filing_date":"2017-03-24T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":21,"abstract":"Technology is described for selecting a group of reversible-resistance memory cells in which to store data based on information regarding switching the reversible-resistance memory cells from a first resistance state in which the reversible-resistance memory cells are in immediately after fabrication to a second resistance state for the first time after fabrication. Information regarding switching the reversible-resistance memory cells from the first resistance state to the second resistance state for the first time after fabrication may provide insight into factors including, but not limited to, endurance and data retention. In one aspect, a control circuit is configured to select a group of reversible-resistance memory cells in which to store data based on both the difficulty in switching from the first resistance state to the second resistance state for the first time after fabrication and a temperature of the data to be stored in the memory system."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Selecting reversible resistance memory cells based on initial resistance switching","description":"Technology is described for selecting a group of reversible-resistance memory cells in which to store data based on information regarding switching the reversible-resistance memory cells from a first ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837153","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837153","citation_suggestion":"Patentable. \"Selecting reversible resistance memory cells based on initial resistance switching\" (US-9837153). https://patentable.app/patents/US-9837153","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837153","json":"https://patentable.app/api/llm-context/US-9837153","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:11:39.125Z"}