{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837251","patent":{"patent_number":"US-9837251","title":"Plasma etching method, plasma etching device, plasma processing method, and plasma processing device","assignee":null,"inventors":[],"filing_date":"2015-02-25T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":13,"abstract":"A plasma etching method includes a first step of attracting a substrate onto a monopolar electrostatic chuck in a first plasma, which is a plasma of a noble gas, and stopping generation of the first plasma after the attracting of the substrate, and a second step of etching the substrate in a second plasma, which is a plasma of a halogen-based etching gas, and stopping generation of the second plasma after the etching of the substrate. In the first step, the generation of the first plasma is stopped when a positive voltage is applied from the monopolar electrostatic chuck to the substrate. In the second step, the generation of the second plasma is stopped when a negative voltage is applied from the monopolar electrostatic chuck to the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Plasma etching method, plasma etching device, plasma processing method, and plasma processing device","description":"A plasma etching method includes a first step of attracting a substrate onto a monopolar electrostatic chuck in a first plasma, which is a plasma of a noble gas, and stopping generation of the first p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837251","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837251","citation_suggestion":"Patentable. \"Plasma etching method, plasma etching device, plasma processing method, and plasma processing device\" (US-9837251). https://patentable.app/patents/US-9837251","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837251","json":"https://patentable.app/api/llm-context/US-9837251","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:26:17.287Z"}