{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837270","patent":{"patent_number":"US-9837270","title":"Densification of silicon carbide film using remote plasma treatment","assignee":null,"inventors":[],"filing_date":"2016-12-16T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Provided are methods and apparatuses for densifying a silicon carbide film using remote plasma treatment. Operations of remote plasma deposition and remote plasma treatment of the silicon carbide film alternatingly occur to control film density. A first thickness of silicon carbide film is deposited followed by a remote plasma treatment, and then a second thickness of silicon carbide film is deposited followed by another remote plasma treatment. The remote plasma treatment can flow radicals of source gas in a substantially low energy state, such as radicals of hydrogen in a ground state, towards silicon carbide film deposited on a substrate. The radicals of source gas in the substantially low energy state promote cross-linking and film densification in the silicon carbide film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Densification of silicon carbide film using remote plasma treatment","description":"Provided are methods and apparatuses for densifying a silicon carbide film using remote plasma treatment. Operations of remote plasma deposition and remote plasma treatment of the silicon carbide film","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837270","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837270","citation_suggestion":"Patentable. \"Densification of silicon carbide film using remote plasma treatment\" (US-9837270). https://patentable.app/patents/US-9837270","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837270","json":"https://patentable.app/api/llm-context/US-9837270","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:52:20.979Z"}