{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837286","patent":{"patent_number":"US-9837286","title":"Systems and methods for selectively etching tungsten in a downstream reactor","assignee":null,"inventors":[],"filing_date":"2016-02-03T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for selectively etching a tungsten layer on a substrate includes arranging a substrate including a tungsten layer on a substrate support. The substrate processing chamber includes an upper chamber region, an inductive coil arranged outside of the upper chamber region, a lower chamber region including the substrate support and a gas dispersion device arranged between the upper and lower chamber regions. The gas dispersion device includes a plurality of holes in fluid communication with the upper and lower chamber regions. The method further includes controlling pressure in the substrate processing chamber in a range from 0.4 Torr to 10 Torr; supplying an etch gas mixture including fluorine-based gas to the upper chamber region; striking inductively coupled plasma in the upper chamber region by supplying power to the inductive coil; and selectively etching the tungsten layer relative to at least one other film material of the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Systems and methods for selectively etching tungsten in a downstream reactor","description":"A method for selectively etching a tungsten layer on a substrate includes arranging a substrate including a tungsten layer on a substrate support. The substrate processing chamber includes an upper ch","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837286","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837286","citation_suggestion":"Patentable. \"Systems and methods for selectively etching tungsten in a downstream reactor\" (US-9837286). https://patentable.app/patents/US-9837286","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837286","json":"https://patentable.app/api/llm-context/US-9837286","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:47:02.560Z"}