{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837304","patent":{"patent_number":"US-9837304","title":"Sidewall protection scheme for contact formation","assignee":null,"inventors":[],"filing_date":"2016-06-24T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Method of manufacturing a semiconductor device is described that uses sidewall protection of a recessed feature to prevent loss of critical dimension during a cleaning process to remove etch residue. According to one embodiment, the method includes providing a substrate containing a film thereon having a recessed feature with a sidewall and a bottom portion, depositing a conformal film on the sidewall and on the bottom portion, removing the conformal film from the bottom portion in an anisotropic etching process, where the remaining conformal film forms a protection film on the sidewall, and performing a cleaning process that removes etch residue from the recessed feature without etching the protection film or the sidewall."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Sidewall protection scheme for contact formation","description":"Method of manufacturing a semiconductor device is described that uses sidewall protection of a recessed feature to prevent loss of critical dimension during a cleaning process to remove etch residue. ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837304","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837304","citation_suggestion":"Patentable. \"Sidewall protection scheme for contact formation\" (US-9837304). https://patentable.app/patents/US-9837304","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837304","json":"https://patentable.app/api/llm-context/US-9837304","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:19:08.511Z"}