{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837305","patent":{"patent_number":"US-9837305","title":"Forming deep airgaps without flop over","assignee":null,"inventors":[],"filing_date":"2016-07-05T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure that includes: a semiconductor substrate having a semiconductor base and back end of the line (BEOL) wiring layers; a dielectric cap layer on the semiconductor base; trenches on the dielectric cap layer, each of the trenches including dielectric walls, a dielectric bottom in contact with the dielectric cap layer and a metal filling a space between the dielectric walls; air gap openings on the dielectric cap layer and interspersed with the trenches, each air gap opening between the dielectric wall from one metal trench and adjacent to the dielectric wall of a second metal, the dielectric cap layer forming a bottom of the air gap openings; and a second dielectric cap layer formed over the trenches and over the air gap openings, the second dielectric cap layer pinching off each air gap opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Forming deep airgaps without flop over","description":"A semiconductor structure that includes: a semiconductor substrate having a semiconductor base and back end of the line (BEOL) wiring layers; a dielectric cap layer on the semiconductor base; trenches","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837305","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837305","citation_suggestion":"Patentable. \"Forming deep airgaps without flop over\" (US-9837305). https://patentable.app/patents/US-9837305","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837305","json":"https://patentable.app/api/llm-context/US-9837305","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:18:59.195Z"}