{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837357","patent":{"patent_number":"US-9837357","title":"Method to reduce variability in contact resistance","assignee":null,"inventors":[],"filing_date":"2017-02-06T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Various methods and semiconductor structures for fabricating at least one FET device having textured gate-source-drain contacts of the FET device that reduce or eliminate variability in parasitic resistance between the contacts of the FET device. An example fabrication method includes epitaxially growing a source-drain contact region on an underlying semiconductor substrate of one of a pFET device or an nFET device. The method deposits a Nickel film layer directly on the epitaxially grown source-drain contact region. A first anneal forms a textured Nickel silicide film layer directly on the epitaxially grown source-drain contact region. A second metal film layer is deposited on the textured Nickel silicide film layer. A second anneal forms a textured second metal silicide film layer. The method can be repeated on the other one of the pFET device or the nFET device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method to reduce variability in contact resistance","description":"Various methods and semiconductor structures for fabricating at least one FET device having textured gate-source-drain contacts of the FET device that reduce or eliminate variability in parasitic resi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837357","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837357","citation_suggestion":"Patentable. \"Method to reduce variability in contact resistance\" (US-9837357). https://patentable.app/patents/US-9837357","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837357","json":"https://patentable.app/api/llm-context/US-9837357","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:19:46.128Z"}