{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837414","patent":{"patent_number":"US-9837414","title":"Stacked complementary FETs featuring vertically stacked horizontal nanowires","assignee":null,"inventors":[],"filing_date":"2016-10-31T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"After forming a stacked nanowire CMOS device including a first stacked nanowire array laterally surrounded by first epitaxial semiconductor regions, a second stacked nanowire array overlying the first stacked nanowire array and laterally surrounded by second epitaxial semiconductor regions, and a functional gate structure straddling over each semiconductor nanowire in the first and second stacked nanowire arrays, a common source/drain contact structure is formed on one side of the functional gate structure contacting one of the first epitaxial semiconductor regions and one of the second epitaxial semiconductor regions. A first local source/drain contact structure is formed on the opposite side of the functional gate structure contacting another of the first epitaxial semiconductor regions. After forming a trench isolation structure over the first local source/drain contact structure, a second local source/drain structure is formed overlying the first source/drain local contact structure and contacting another of the second epitaxial semiconductor regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Stacked complementary FETs featuring vertically stacked horizontal nanowires","description":"After forming a stacked nanowire CMOS device including a first stacked nanowire array laterally surrounded by first epitaxial semiconductor regions, a second stacked nanowire array overlying the first","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837414","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837414","citation_suggestion":"Patentable. \"Stacked complementary FETs featuring vertically stacked horizontal nanowires\" (US-9837414). https://patentable.app/patents/US-9837414","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837414","json":"https://patentable.app/api/llm-context/US-9837414","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:24:14.569Z"}